View FDC6000NZ_413825.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDC6000NZ
June 2004
FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Features
* 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V RDS(ON) = 28 m @ VGS = 2.5 V
* ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
Bottom Drain Contact
Applications
* Battery management/Charger Application * Load switch
S2 S1 G1 S2 SuperSOT-6
TM
4
G2
3 2 1
Bottom Drain Contact
5 6
S1 FLMP
TA=25oC unless otherwise noted
MOSFET Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W
7.3 20 1.6 1.8 1.2 -55 to +150
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJc Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1a)
68 1
C/W
Package Marking and Ordering Information
Device Marking .0NZ
2004 Fairchild Semiconductor Corporation
Device FDC6000NZ
Reel Size 7''
Tape width 8mm
Quantity 3000 units
FDC6000NZ Rev E1 (W)
FDC6000NZ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min
20
Typ Max Units
V 14 1 10 mV/C A A V mV/C 20 21 24 28 30 m
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 A 0.6 0.9 -4 16.5 16.8 19.2 22.5 22.8 30
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
1.5
ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.5 A ID = 6.4 A VGS = 4.0 V, ID = 6.3 A VGS = 3.1 V, ID = 5.5 A VGS = 2.5 V, VGS = 4.5 V, ID = 6.5A, TJ=125C VDS = 5 V, ID = 6.5 A
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
840 210 100
pF pF pF
VGS = 15 mV,
f = 1.0 MHz
2.3
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
10 15 18 9
20 27 32 18 11
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 6.5 A,
8 1.5 2.1
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.25A
(Note 2)
1.25 0.7 1.2
A V
FDC6000NZ RevE1 (W)
FDC6000NZ
Electrical Characteristics
Symbol
trr Qrr
NOTES:
TA = 25C unless otherwise noted
Parameter
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Test Conditions
IF = 6.5 A, diF/dt = 100 A/s
Min
Typ Max Units
16 4.3 nS nC
Drain-Source Diode Characteristics and Maximum Ratings
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
68C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation).
b)
102C/W when mounted on a minimum pad of 2 oz copper (Single Operation).
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection).
FDC6000NZ RevE1 (W)
FDC6000NZ
Dimensional Outline and Pad Layout
Bottom View
Recommended Landing Pattern For Common Drain Configuration
Recommended Landing Pattern For Standard Dual Configuration Top View
FDC6000NZ RevE1 (W)
FDC6000NZ
Typical Characteristics
20 3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V 3.5V
2.5V 3.0V 2.0V
2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0
VGS = 1.8V
ID, DRAIN CURRENT (A)
15
10
2.0V
1.8V
5
2.5V 3.0V 3.5V 4.5V
15 20
0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V)
5
10 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.062
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 6.5A VGS = 4.5V 1.4
0.057 0.052 0.047 0.042 0.037 0.032 0.027 0.022 0.017
ID = 3.3 A
1.2
TA = 125oC
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
0.012 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC 125oC 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6000NZ Rev E1(W)
FDC6000NZ
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.5A 4 VDS = 5V 10V
CAPACITANCE (pF)
1200 1000 CISS 800 600 400 200 CRSS 0 COSS f = 1MHz VGS = 0 V
15V 3
2
1
0 0 2 4 6 8 10 Qg, GATE CHARGE (nC)
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 100ms 1s 100s 1ms
40
SINGLE PULSE RJA = 102C/W TA = 25C
30
1
10s DC VGS = 4.5V SINGLE PULSE RJA = 102oC/W TA = 25oC
20
0.1
10
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R JA (t) = r(t) * R JA R JA = 102 C/W P(pk) t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.2
0.1
0.1 0.05 0.02 0.01
0.01 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC6000NZ Rev E1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

▲Up To Search▲

Price & Availability of FDC6000NZ

	To Download FDC6000NZ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .